Epitaxial self-assembled quantum dots (SAQDs) are of interest fornanostructured optoelectronic and electronic devices such as lasers,photodetectors and nanoscale logic. Spatial order and size order of SAQDs areimportant to the development of usable devices. It is likely that these twotypes of order are strongly linked; thus, a study of spatial order will alsohave strong implications for size order. Here a study of spatial order isundertaken using a linear analysis of a commonly used model of SAQD formationbased on surface diffusion. Analytic formulas for film-height correlationfunctions are found that characterize quantum dot spatial order andcorresponding correlation lengths that quantify order. Initial atomic-scalerandom fluctuations result in relatively small correlation lengths (about twodots) when the effect of a wetting potential is negligible; however, thecorrelation lengths diverge when SAQDs are allowed to form at a near-criticalfilm height. The present work reinforces previous findings about anisotropy andSAQD order and presents as explicit and transparent mechanism for ordering withcorresponding analytic equations. In addition, SAQD formation is by its naturea stochastic process, and various mathematical aspects regarding statisticalanalysis of SAQD formation and order are presented.

外延自组装量子点 (SAQD) 对纳米结构的光电和电子器件如激光器、光电探测器和纳米级逻辑器件很感兴趣。 SAQD 的空间顺序和大小顺序对于可用设备的开发很重要。这两种秩序很可能有很强的联系；因此，对空间顺序的研究也将对大小顺序产生重要影响。这里使用基于表面扩散的 SAQD 形成的常用模型的线性分析来进行空间秩序的研究。找到了表征量子点空间有序性的薄膜高度相关函数的解析公式和量化有序性的相应相关长度。当润湿电位的影响可以忽略不计时，初始原子尺度随机波动会导致相关长度相对较小（大约两个点）；然而，当允许在接近临界膜高度形成 SAQD 时，相关长度会发散。目前的工作加强了先前关于各向异性和 SAQD 顺序的发现，并提出了用相应的解析方程进行排序的明确和透明的机制。此外，SAQD 的形成本质上是随机过程，并且介绍了有关 SAQD 形成和顺序的统计分析的各种数学方面。