Filling-Factor-Dependent Magnetophonon Resonance in Graphene
M. O. Goerbig
Vladimir I. Fal'ko
M. O. Goerbig update to 2009-09-24
We describe a peculiar fine structure acquired by the in-plane optical phononat the Gamma-point in graphene when it is brought into resonance with one ofthe inter-Landau-level transitions in this material. The effect is mostpronounced when this lattice mode (associated with the G-band in graphene Ramanspectrum) is in resonance with inter-Landau-level transitions 0 -> (+,1) and(-,1) -> 0, at a magnetic field B_0 ~ 30 T. It can be used to measure thestrength of the electron-phonon coupling directly, and its filling-factordependence can be used experimentally to detect circularly polarized latticemodes.
journal: Phys. Rev. Lett. 99, 087402 (2007)