Quasi-quartet crystal electric field ground state in a tetragonal CeAg$_2$Ge$_2$ single crystal

A. Thamizhavel
R. Kulkarni and S. K. Dhar

Arumugam Thamizhavel update to 2009-11-13

https://arxiv.org/abs/0704.0119
We have successfully grown the single crystals of CeAg$_2$Ge$_2$, for thefirst time, by flux method and studied the anisotropic physical properties bymeasuring the electrical resistivity, magnetic susceptibility and specificheat. We found that CeAg$_2$Ge$_2$ undergoes an antiferromagnetic transition at$T_{\rm N}$ = 4.6 K. The electrical resistivity and susceptibility data revealstrong anisotropic magnetic properties. The magnetization measured at $T$ = 2 Kexhibited two metamagnetic transitions at $H_{\rm m1}$ = 31 kOe and $H_{\rmm2}$ = 44.7 kOe, for $H \parallel$ [100] with a saturation magnetization of 1.6$\mu_{\rm B}$/Ce. The crystalline electric field (CEF) analysis of the inversesusceptibility data reveals that the ground state and the first excited statesof CeAg$_2$Ge$_2$ are closely spaced indicating a quasi-quartet ground state.The specific heat data lend further support to the presence of closely spacedenergy levels.

journal: None

category: cond-mat.str-el

四方晶系准四方晶体电场基态 CeAg$_2$Ge$_2$ 单晶

A. Thamizhavel
R. Kulkarni and S. K. Dhar

Arumugam Thamizhavel update to 2009-11-13

https://arxiv.org/abs/0704.0119

category: cond-mat.str-el