We report on the layer-by-layer growth of single-crystal Al2O3 thin-films onNb (110). Single-crystal Nb films are first prepared on A-plane sapphire,followed by the evaporation of Al in an O2 background. The first stages ofAl2O3 growth are layer-by-layer with hexagonal symmetry. Electron and x-raydiffraction measurements indicate the Al2O3 initially grows clamped to the Nblattice with a tensile strain near 10%. This strain relaxes with furtherdeposition, and beyond about 5 nm we observe the onset of island growth.Despite the asymmetric misfit between the Al2O3 film and the Nb under-layer,the observed strain is surprisingly isotropic.

我们报告了单晶 Al2O3 薄膜在 Nb (110) 上的逐层生长。首先在 A 面蓝宝石上制备单晶 Nb 薄膜，然后在 O2 背景下蒸发 Al。 Al2O3 生长的第一阶段是六边形对称的逐层生长。电子和 X 射线衍射测量表明，Al2O3 最初以接近 10% 的拉伸应变夹在 Nblattice 上生长。该应变随着进一步沉积而松弛，超过约 5 nm，我们观察到岛生长的开始。尽管 Al2O3 膜和 Nb 底层之间存在不对称错配，但观察到的应变却是惊人的各向同性。