From first-principles calculations, we predict that transition metal (TM)atom doped silicon nanowires have a half-metallic ground state. They areinsulators for one spin-direction, but show metallic properties for theopposite spin direction. At high coverage of TM atoms, ferromagnetic siliconnanowires become metallic for both spin-directions with high magnetic momentand may have also significant spin-polarization at the Fermi level. Thespin-dependent electronic properties can be engineered by changing the type ofdopant TM atoms, as well as the diameter of the nanowire. Present results arenot only of scientific interest, but can also initiate new research onspintronic applications of silicon nanowires.

根据第一性原理计算，我们预测过渡金属 (TM) 原子掺杂的硅纳米线具有半金属基态。它们是一个自旋方向的绝缘体，但在相反的自旋方向上显示出金属特性。在 TM 原子的高覆盖率下，铁磁硅纳米线在两个自旋方向都变成金属，具有高磁矩，并且在费米能级也可能具有显着的自旋极化。可以通过改变掺杂剂 TM 原子的类型以及纳米线的直径来设计与自旋相关的电子特性。目前的结果不仅具有科学意义，而且还可以启动有关硅纳米线自旋电子应用的新研究。